JPS6142854B2 - - Google Patents
Info
- Publication number
- JPS6142854B2 JPS6142854B2 JP16315778A JP16315778A JPS6142854B2 JP S6142854 B2 JPS6142854 B2 JP S6142854B2 JP 16315778 A JP16315778 A JP 16315778A JP 16315778 A JP16315778 A JP 16315778A JP S6142854 B2 JPS6142854 B2 JP S6142854B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- amorphous layer
- single crystal
- amorphous
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16315778A JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5587429A JPS5587429A (en) | 1980-07-02 |
JPS6142854B2 true JPS6142854B2 (en]) | 1986-09-24 |
Family
ID=15768304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16315778A Granted JPS5587429A (en) | 1978-12-26 | 1978-12-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5587429A (en]) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0217856U (en]) * | 1988-07-22 | 1990-02-06 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58209120A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 半導体装置の製造方法 |
JPS6095921A (ja) * | 1983-10-31 | 1985-05-29 | Toshiba Corp | 半導体装置の製造方法 |
JPS61142738A (ja) * | 1984-12-17 | 1986-06-30 | Toshiba Corp | 単結晶基体へのイオン注入方法 |
JPH0235715A (ja) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPH02306622A (ja) * | 1989-05-22 | 1990-12-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
-
1978
- 1978-12-26 JP JP16315778A patent/JPS5587429A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0217856U (en]) * | 1988-07-22 | 1990-02-06 |
Also Published As
Publication number | Publication date |
---|---|
JPS5587429A (en) | 1980-07-02 |
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